• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Method and apparatus for particle irradiation of a target, wherein the anisotropic contrast deflection of an irradiation modulator for producing the exposure pattern is produced step by step, the magnitude of the potential difference between the electrodes of a comb electrode is being set, and the structuring of a line probe is controlled by a control logic according to given specifications by utilization of potential setting patterns.
    公开号:SU1448370A1
    申请号:SU847773429
    申请日:1984-05-28
    公开日:1988-12-30
    发明作者:Эберхард Хан
    申请人:Феб Карл Цейсс Йена (Инопредприятие)；
    IPC主号:
    专利说明:

    4th
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    The invention relates to elion technique, in particular, to electron irradiation of a target, and can be used in corpuscular irradiation devices with charged particles for processing the product, in particular, in electron beam devices for microlithographic structuring of thin layers in the manufacture of structural elements with sizes in the submicron range.
    Methods and devices are known in which local changes in thin layers are caused by electron irradiation, as a result of which microlithographic processing of products is possible.
    When using the principle of beam structuring, in which the beam modulator acts on the formed beam complex, high performance and accuracy are achieved.
    In known solutions, a beam of rays during structuring is decomposed into a large number of partial beams. Characteristic of this decomposition is the filtering of a large number of channels by the shadow mask of the beam. Each channel contains a separate deflection system for modulating the partial and light fields (blanking) of the partial beam, which leads to. This leads to the fact that the pitch of the holes is much larger than their diameter, what. reduces mask bandwidth. The cross section of the multipath beam in the plane of the target is a reduced image of the shadow mask. Managing the recording of any topology is difficult, since it is one and the same. however, the detail of the structure repeatedly in time sequence falls different partial beams.
    The known solution describes the structuring of the intensity of a probe probe by the action of a beam modulator on an astagmatically formed lex rays.
    The known method of corpuscular irradiation of a target involves treating the surface with an electron beam transformed into a dashed probe with two focal lines located in different planes and a structured effect of the modulator field on the first focal line by changing the potentials of its electrodes.
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    and obtaining the probe image on the surface to be treated by superposition of the first and second focal lines in the plane of the target.
    In the known device for the corpuscular irradiation of the target, a sequentially arranged electron gun, a deflection system and a beam forming system arranged in different planes along the optical axis of the quadrupole lens device, the beam forming system, in which the first quadrupole lens modulator is installed, is installed in the first focal plane. - ktron combs on the lateral surface of the semiconductor washer, on the end1 | the surface of which is located the electrode potential control system, and in the second focal plane of the first quadrupole lens a slit diaphragm is installed, the axis of which is perpendicular to the comb electrodes (ibid.).
    The aim of the invention is to increase the speed and accuracy of processing and simplify the device.
    FIG. .1 shows a variant of the device together with a control system; FIG. 2 is a diagram of an electrode comb; in fig. 3 is a variation of the field distribution in the modulator; in fig. 4 shows the intensity of the electron beam modulated by the field of FIG. 3; in fig. 5-7 - the form of the electrodes of the comb.
    The device contains an electron gun 1, the electron beam 2 of which originating from the crossover 3 is limited to a rectangular aperture 4. The system of quadrupole lenses 5 focuses the beam of rays astigmatically into two axes perpendicular to the axes and orthogonal to each other: in the first focal line 6 and separately from it in the axial direction into the second focal line 7.
    The lens system 8 of rotationally symmetric or quadrupole symmetric design stigmatically displays the first focal line 6 in the form of a dashed probe 9 on a target 10. Its target a small table 11 can move in two directions perpendicular to each other, in which overlap of dashed lines is possible. probe 9 with each place of the target 10.
    On a beam astigmatically formed by a quadrupole lens system 5
    rays are affected by a beam modulator. It consists of a strip of 12 electrodes installed parallel to the first focal line 6 and at its height on the substrate 13, and from the slit diaphragm 14 located parallel to the second focal line 7 and at its height. Potentials are applied to the electrodes 15 of the strip 12, so that in the vicinity of the strip of electrodes 12 there is an electric field that performs the controlled structuring of the dashed probe 9.
    The beam modulator is divided into two sections: the first electrode comb 16 and the second electrode comb 17, which is located behind the first one in the direction of the beam propagation and shifted by a distance equal to half the rod. The electrodes 15 of the electrode combs 16 and 17 in the example of a specific embodiment were applied potentials of the magnitude of -2, -1, +1 and +2. These potentials are symbolically normalized multiples of the base potential.
    Zones with opposite contrast values appear in the vicinity of the electrode, which is switched compared to its neighboring electrodes of the same electrode comb 16 or 17 with a potential of -2 to the counterpotential, i.e. on . In case of limitation by a separate comb in the area of a dark stroke, the alternating distribution of potentials is necessary, i.e. -2, +2, -2, +2, -2 and so on. In the case of a double comb
    ten
    15
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    thirty
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    its upper wide side with the help of the microlithic equipment is formed by the switches 18, each of which is connected to one of the electrodes 1 of the first electrode comb 16 through conductor lines 19 and one potential can be applied to the corresponding electrode 15 through conductor lines lines 20 by voltage source 21. Switches through multiplexers 22 are in parallel controlled by keyboard registers 23 of the first modulator section, the distribution of potentials of which corresponds to the distribution of potentials of the first electrode comb 16, each storage cell of the keyboard register 23 corresponds to one electrode 15 of the first electrode comb 16. On the lower dashed side of the substrate 13, switches, multiplexers, and connecting lines are installed in a similar way. The switches 20 also carry the potential of the voltage source 21 to the conductor lines 20. The control lines 24 of the first section of the modulator have vacuum tight wiring 25 through the vacuum housing 26, in which the gun 1 is located, limiting the beam aperture 4, the system kv rupole lenses 5, the lens system 8, the substrate 13 and the movable table 11. The control lines 24 approach the parallel output of the keyboard recorder 23 of the first modulator section. The output of the keyboard register 27 of the second modulator section by the control lines
    16 and 17 in the region of the dark stroke, the multiplexer is connected to
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    its upper wide side with the help of mIkoliticheskoi technology is formed by switches 18, each of which through conductor lines 19 is rigidly connected to one of the electrodes 15 of the first electrode comb 16 and with the help of which one potential is applied to the corresponding electrode 15 through source lines 20 voltages 21. The switches through the multiplexers 22 are in parallel controlled by the keyboard register 23 of the first modulator section, the potential distribution of which corresponds to the potential distribution the first electrode comb 16, and each storage cell of the keyboard register 23 corresponds to one electrode 15 of the first electrode comb 16. On the lower dashed side of the substrate 13, switches, multiplexers and connecting lines are installed in the same way. The potentials of the voltage source 21 are also connected to the switches via the conductor lines 20. The control lines 24 of the first section of the modulator have vacuum tight wiring 25 through the vacuum housing 26, in which gun 1 is placed, limiting the beam diaphragm 4, the system is square hinge lenses 5, lens system 8, substrate 13 and movable table 11. The control lines 24 fit the parallel output of the keyboard register 23 of the first modulator section. The output of the keyboard register 27 of the second modulator section by the control lines
    The definition of the potentials of both electronic combs 16 and 17 is a mirror-reversal and when using the maximum permissible length of intervals with a decrease in contrast in the case of the first electrode comb 16 have a period of -2, -2, -2, -2, +2 and in the case of the second electrode comb 17 - period -2, +2, +2, +2, +2.
    In order to eliminate the interference of neighboring areas of the dashed probe onto the electrode 15 of the first electrode comb 16 or the second electrode comb 17, the ending or starting dark stroke is applied to the prog gg of the horn 23 and 27 each have two parallel-intermediate potential of -1 or +1. The pole inputs to which the 12 electrodes are connected are located on narrow parallel outlets on the universal side of the substrate 13, which are greasy shift registers 29 and 32. In a semiconductor wafer. On the corresponding parallel lines
    switches of the second electrode comb 17. The distribution of the keyboard register 27 corresponds to the distribution of the potentials of the second electrode-5 comb 17. The distribution necessary for the corresponding bar topology in the keyboard registers 23 and 27, explained in FIG. 2-4, arises as a result of a sequence of shift cycles in universal shift registers of 29, 30, and 31, 32, the number of which, regardless of the dashed topology, is limited to approximately t 10. Both keyboard shortcuts
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    arranged in one buffer with 33 seconds. three parallel outputs and one valve circuit 34 in order to modulate the light floor of the remainder of the dark bar in the programmed light bar area. The parallel input of the universal shift registers 29-32 is connected by the parallel output of the corresponding storage device for storing the coefficients 35, in which the independent distribution of the dashed topology of the initial distribution is performed, namely the distribution of the dark bar with a period of -2, -2, -2, -2, +2, or -2, +2, +2, +2, +2. The parallel operation of the computer 36, depending on the bar topology data, controls the decomposition of the keyboard registers 23 and 27 into partial keyboard registers and, during the pauses of the shift cycles, the decomposition of the universal shift registers 29 and 32 into partial shift registers. In addition, it controls the direction, the shift to the left or to the right, and the number of shift cycles,
    FIG. 2 is double. the comb 37. The electrode comb of the first section of the modulator is marked 16 and the second section of the modulator is marked 17. On the first electrode greg bank 16, stroke electrodes 15 are short-circuited in pairs, similarly on the second electrode comb 17. The gaps of the first electrode comb 17 alternate at intervals of the second electrode comb 17. Activated are open intervals. The direction of propagation of the beam is parallel to the edges in the plane of the drawing from the electrode comb 16 towards the electrode comb 17. The intervals sequentially arranged in the direction of the beam propagation, one interval of the first electrode comb 16 and one interval of the electrode comb 17, are conjugated with one element of the image bar probe 9. The odd element of the image of the bar probe 9 corresponds to the activated intervals of the first section of the modulator and to the even elements of the image - activated mye intervals of the second section of the modulator. Since neighboring electrodes 15 electrode comb short 483706
    closed, the lattice constant of the first and also the second electrode comb 16 and 17 is doubled. Two adjacent intervals of the first section of the modulator j of which one is activated and the other is not activated, and two intervals behind it in the direction of propagation of the beam
    10 of the second modulator section, one of which is not activated and the other activated, determines one channel. Lines 39, shown in FIG. 2–4 at the lattice constant, characterizing the distribution of the channels. The channel entrance is a portion of the first focal line 6 designated by two contiguous intervals, and the output is a pair of 20 pixels on the dashed probe 9 that is paired with this part. A stigmatic image is formed between the input and the output, approximately equal to half the width of the channel. . The contrast of the electron flow is controlled by the intensity of the field applied at the input. This field strength is created not only by the potential difference that is 30 s between the electrodes of the first or second section of the modulator denoting the channel entrance. Both denoting the input of the channel 40 of the interval 41 and 42 of the first electrode comb 15 or the second electrode comb 17 do not activate.
    vans, as shown in .fig. 2
    This makes it possible to blanking an image at the channel output by feeding an equal potential difference to adjacent channels.
    In channels 43 and 44, the activating potential differences have the opposite sign, i.e. the intensity of the floor have the opposite direction. So
    Thus, in the transition region from one channel to another, where both fields are deducted, the decrease in contrast is weakened, as shown by the bright wedge 45 in FIG. 4, separating the hatched regions 46 and 47 from each other. The bright wedge 45 is not stigmatically transmitted by the optical system and only leads to a slight illumination of the corresponding pair of channel image elements, which is insufficient to fully expose the covering layer 10 of the lacquer layer.
    The bright wedge 45 is found by increasing the potential difference by
    neighboring electrodes in comparison with the potential difference at the edge of 48 dark bars. At the edge of the dark stroke, the interference of the last blanked channel with the first channel of the light stroke is not allowed. For this, double-die electrodes 15 are connected to 1/4 potential via electronic switches 18 connected to a four-pole potentiometer.
    The width of the effective contrast field in the direction perpendicular to the surface of the double comb 37 can be increased, i.e. the width of the focal line and the possibility of installing it at a greater distance with respect to the top of the electrode comb are increased.
    FIG. 3 it follows that the potential distribution of the second section of the modulator, shown by the dotted line, is inversely symmetrical with respect to the distribution of potentials of the first section of the modulator, shown by a discontinuous line, i.e. When creating dark strokes, this potential distribution of both electrode combs is used.
    FIG. 5-6 show the embodiment of the electrodes 15 electrode combs.
    FIG. 5, the width of the strip electrodes 42 is equal to the width of the gap between the ribs 38 of the electrode comb, as shown in FIG. 2.1.
    FIG. 6, the distance 50 between the electrodes is small compared to the width of the electrodes, which reduces interference due to the charging of a semiconductor substrate that insulates the electrodes.
    According to FIG. 6, the electrodes may be inserted over the insulating substrate 51. The conductor lines 19 and 20 to the double-comb electrodes, pred. . put in FIG. 1 can be performed on both wide sides of a semiconductor wafer, on the narrow side of which there is a double comb.
    权利要求:
    Claims (5)
    [1]
    1. A method of corpuscular irradiation of a target, including surface treatment with an electron beam transformed into a dashed probe with two focal lines, is located-. in different planes, and structure-.
    by modulating the field of the first focal line by changing the potentials of its electrodes and obtaining an image of the probe on the treated surface by superposition of the first and second focal lines in the target plane, characterized in that, in order to increase the speed and accuracy of processing, the electron beam is structured for even and odd intervals of the probe probe.
    [2]
    2. A method according to claim 1, characterized in that in the process of obtaining an image of the probe on the treated surface, the angle between the first and second focal lines is changed.
    [3]
    3. The method according to claim 1, distinguishing and and with
    that change potential5
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    Electrodes for even and odd intervals of the probe probe are symmetrically arranged with respect to the center of the blank line, changing the sign of the odd ones to the opposite one over even ones.
    [4]
    4. A device for corpuscular irradiation of a target containing successively arranged electron gun, a deflection system and a beam forming system arranged in different planes along the optical axis of the quadrupole lens device, in a first focal plane of the first quadrupole lens of which the modulator field is installed two-electron combs on the side surface of the semiconductor washer, on the end surface of which the electrode potential control system is placed, and in the second The focal plane of the first quadrupole lens is fitted with a slit diaphragm, the axis of which is perpendicular to the electrode combs, characterized in that, in order to simplify the device and increase the target irradiation rate, the electrode combs are parallel to each other in the direction of the first focal line by half step combs.
    [5]
    5. The device according to claim 4, characterized in that it additionally contains quadrupole or rotationally symmetric lenses located between the first and second floor-lens of the siegema formation
    Calnidus planes of the first quad-beam.
    FIG. 6
    Physical 5
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    同族专利:
    公开号 | 公开日
    HUT40523A|1986-12-28|
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    GB2143079A|1985-01-30|
    DD225879A3|1985-08-07|
    US4633090A|1986-12-30|
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    FR2548437A1|1985-01-04|
    JPS60258922A|1985-12-20|
    DE3417976A1|1985-01-10|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    JPS52119178A|1976-03-31|1977-10-06|Toshiba Corp|Electron beam exposure device|
    CA1100237A|1977-03-23|1981-04-28|Roger F.W. Pease|Multiple electron beam exposure system|
    US4472636A|1979-11-01|1984-09-18|Eberhard Hahn|Method of and device for corpuscular projection|
    DD158197A3|1980-10-01|1983-01-05|Eberhard Hahn|METHOD AND DEVICE FOR CORPUSCULAR RADIATION OF A TARGET|
    JPS6222261B2|1981-09-11|1987-05-16|Nippon Telegraph & Telephone|
    US4469950A|1982-03-04|1984-09-04|Varian Associates, Inc.|Charged particle beam exposure system utilizing variable line scan|DE3504714A1|1985-02-12|1986-08-14|Siemens AG, 1000 Berlin und 8000 München|LITHOGRAPH DEVICE FOR GENERATING MICROSTRUCTURES|
    US4980567A|1988-03-30|1990-12-25|Fujitsu Limited|Charged particle beam exposure system using line beams|
    US5144142A|1989-05-19|1992-09-01|Fujitsu Limited|Blanking aperture array, method for producing blanking aperture array, charged particle beam exposure apparatus and charged particle beam exposure method|
    US5262341A|1989-05-19|1993-11-16|Fujitsu Limited|Blanking aperture array and charged particle beam exposure method|
    JP2723405B2|1991-11-12|1998-03-09|松下電器産業株式会社|Method of forming fine electrodes|
    GB2328073B|1997-08-01|2002-05-22|Leica Lithography Systems Ltd|Method of and machine for pattern writing by an electron beam|
    US6683319B1|2001-07-17|2004-01-27|Mitec Incorporated|System and method for irradiation with improved dosage uniformity|
    JP5662863B2|2011-03-31|2015-02-04|株式会社ニューフレアテクノロジー|Charged particle beam drawing apparatus and charged particle beam drawing method|
    JP5927067B2|2012-07-06|2016-05-25|株式会社日立ハイテクノロジーズ|Measurement inspection apparatus and measurement inspection method|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    DD83252661A|DD225879A3|1983-07-01|1983-07-01|METHOD AND DEVICE FOR CORPUSCULAR RADIATION OF A TARGET|
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